MH253ESO MST(美伽) 霍尔效应开关
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MH253ESO MST(美伽) 霍尔效应开关

来源:霍芯电子    时间:2024-03-26

 

MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior

high-temperature performance is made possible through a dynamic offset cancellation that

utilizes chopper-stabilization. This method reduces the offset voltage normally caused by

device over molding, temperature dependencies, and thermal stress.

MH253 includes the following on a single silicon chip: voltage regulator, Hall voltage

generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output.

Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage

requirements, component matching, very low input-offset errors, and small component

geometries.

MH253 is rated for operation between the ambient temperatures –40℃ and +85℃ for the

E temperature range. The four package styles available provide magnetically optimized

solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is

an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package,

while package UA is a three-lead ultra mini SIP for through-hole mounting.

The package type is in a Halogen Free version was verified by third party Lab.

 

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